Highly Bendable, Transparent Thin-Film Transistors That Use Carbon-Nanotube-Based Conductors and Semiconductors with Elastomeric Dielectrics

Authors

  • Q. Cao,

    1. Department of Chemistry, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • S.-H. Hur,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Z.-T. Zhu,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • Y. G. Sun,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • C.-J. Wang,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • M. A. Meitl,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • M. Shim,

    1. Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • J. A. Rogers

    1. Departments of Chemistry, Materials Science and Engineering, and Electrical and Computer Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • We thank T. Banks for help with the processing and M. G. Xia for helpful discussions. This work was supported by DARPA-funded AFRL-managed Macroelectronics Program Contract FA8650-04-C-7101, the U. S. Department of Energy under grant DEFG02-91-ER45439, the NSF through grant NIRT-0403489, and a graduate fellowship from the Fannie and John Hertz Foundation (M. A. M.). Supporting Information is available online from Wiley InterScience or from the author.

Abstract

original image

Transparent flexible thin-film transistors (see Figure) have been made using single-walled carbon nanotube networks of high and moderate coverages as the conducting and semiconducting layers. Electrical (e.g., good performance on plastic), optical (e.g. transparency to visible wavelengths), and mechanical (e.g. extreme flexibility) characteristics that would be difficult, or impossible, to achieve with conventional materials are reported.

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