Homoepitaxial Growth and Lasing Properties of ZnS Nanowire and Nanoribbon Arrays

Authors

  • Y. Jiang,

    1. School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, P.R. China
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  • W. J. Zhang,

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China
    2. Nano-Organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, The Chinese Academy of Sciences, Beijing 100101, P.R. China
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  • J. S. Jie,

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China
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  • X. M. Meng,

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China
    2. Nano-Organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, The Chinese Academy of Sciences, Beijing 100101, P.R. China
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  • J. A. Zapien,

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China
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  • S.-T. Lee

    1. Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P.R. China
    2. Nano-Organic Photoelectronic Laboratory, Technical Institute of Physics and Chemistry, The Chinese Academy of Sciences, Beijing 100101, P.R. China
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  • The work was supported by a grant from the Research Grants Council of Hong Kong SAR, China (Project No. CityU1015/04) and the Strategic Research Grant of the City University of Hong Kong (Project No. 7001598). Prof. Y. Jiang is also grateful for financial support from the Excellent Talent Supporting Project from the New Century of Chinese Education Ministry (NCET-04-0561), and the International Cooperation Project of Anhui Province, China (Grant No. 04088013).

Abstract

original image

Orientation-dependent cathodoluminescence has been found in crossed nanowire arrays (see figure). ZnS crossed nanowire arrays and aligned nanoribbons are grown on micrometer-wide single-crystal ZnS ribbon substrates, which leads to bandgap lasing emission in two specific directions. The reported results present a new route to synthesize II–VI semiconducting nanostructures with attractive photoelectronic properties.

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