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High-Mobility Ambipolar Transport in Organic Light-Emitting Transistors

Authors


  • The authors thank R. Zamboni for stimulating discussions and P. Fancello for technical support. This work was supported at Bologna by the EU under the project FP6-IST-015034 (OLAS) and by the Italian Ministry MIUR under the project FIRB-RBNE033KMA (“Composti molecolari e materiali ibridi nanostrutturati con proprietà ottiche risonanti e non risonanti per dispositivi fotonici”), and at Northwestern by the NASA Institute for Nanoelectronics and Computing (NCC2-3163) and NSF through the Northwestern MRSEC (DMR-0076097).

Abstract

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Organic light-emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 × 10–2 cm2 V–1 s–1. The best performances are realized by sequentially depositing α,ω-dihexyl-quaterthiophene (DH4T) as p-type and N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as n-type materials. Laser-scanning confocal microscopy allows selective imaging of the layers.

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