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Keywords:

  • Ferroelectric materials;
  • Thin films
Thumbnail image of graphical abstract

Integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication of a suspended micro-disk resonator structure (see figure) suggests that the method reported here—a combination of wafer bonding, ion implantation, and layer transfer induced by laser irradiation—may be useful in optoelectronic device applications.