Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Authors


  • This work has been supported by the Army Research Office (ARO-MURI) under grant no. DAAD 19-01-1-0517 and by Arrowhead Research Corporation.

Abstract

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Integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication of a suspended micro-disk resonator structure (see figure) suggests that the method reported here—a combination of wafer bonding, ion implantation, and layer transfer induced by laser irradiation—may be useful in optoelectronic device applications.

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