This work has been supported by the Army Research Office (ARO-MURI) under grant no. DAAD 19-01-1-0517 and by Arrowhead Research Corporation.
Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer†
Article first published online: 18 MAY 2006
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 18, Issue 12, pages 1533–1536, June, 2006
How to Cite
Park, Y.-B., Min, B., Vahala, K. J. and Atwater, H. A. (2006), Integration of Single-Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer. Adv. Mater., 18: 1533–1536. doi: 10.1002/adma.200502364
- Issue published online: 20 JUN 2006
- Article first published online: 18 MAY 2006
- Manuscript Accepted: 4 APR 2006
- Manuscript Received: 3 NOV 2005
- Ferroelectric materials;
- Thin films
Integration of high-quality ferroelectric thin films, e.g., LiNbO3, in planar device architectures on silicon substrates remains a technological challenge. The successful fabrication of a suspended micro-disk resonator structure (see figure) suggests that the method reported here—a combination of wafer bonding, ion implantation, and layer transfer induced by laser irradiation—may be useful in optoelectronic device applications.