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Chemistry for Positive Pattern Transfer Using Area-Selective Atomic Layer Deposition


  • This work was supported in part by the NSF/SRC Center for Environmentally Benign Semiconductor Manufacturing, the Stanford Initiative for Nanoscale Materials and Processes, and the Center for Integrated Systems. RC wishes to acknowledge financial support from the Texas Instruments Graduate Fellowship. We thank Dr. Peter B. Griffin for providing the patterned-oxide silicon wafers, and David Porter, Sandeep Giri, and Xirong Jiang for their assistance with the Pt ALD.


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A chemically selective process to achieve high-resolution area-selective atomic layer deposition (ALD) of Pt thin films on dielectrics (see figure) is introduced. By utilizing the intrinsically selective adsorption behavior of 1-octadecene, a monolayer resist is attached only to the hydride-terminated silicon regions of a patterned SiO2/Si substrate. Subsequently, a Pt thin film is selectively deposited only onto the oxide regions by ALD.

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