Communication

Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor†

  1. E. Menard1,
  2. A. Marchenko1,
  3. V. Podzorov3,
  4. M. E. Gershenson3,
  5. D. Fichou1,
  6. J. A. Rogers2

Article first published online: 18 MAY 2006

DOI: 10.1002/adma.200502569

Issue

Advanced Materials

Advanced Materials

Volume 18, Issue 12, pages 1552–1556, June, 2006

Additional Information

How to Cite

Menard, E., Marchenko, A., Podzorov, V., Gershenson, M., Fichou, D. and Rogers, J. (2006), Nanoscale Surface Morphology and Rectifying Behavior of a Bulk Single-Crystal Organic Semiconductor. Advanced Materials, 18: 1552–1556. doi: 10.1002/adma.200502569

Author Information

  1. 1

    CEA-Saclay, LRC Nanostructures et Semi-Conducteurs Organiques CNRS-CEA-UPMC, SPCSI/DRECAM, 91191 Gif-sur-Yvette, France

  2. 2

    Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Chemistry, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana/Champaign, Urbana, IL 61801, USA

  3. 3

    Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854, USA

  1. †

    This work was supported by the NSF grants DMR-0405208 and ECS-0437932. Supporting Information is available online from Wiley InterScience or from the author.

Publication History

  1. Issue published online: 20 JUN 2006
  2. Article first published online: 18 MAY 2006
  3. Manuscript Accepted: 8 MAR 2006
  4. Manuscript Received: 30 NOV 2005

SEARCH

SEARCH BY CITATION

ARTICLE TOOLS

Get PDF (368K)

Keywords:

  • Charge transport;
  • Semiconductors, organic;
  • Single crystals

Graphical Abstract

Thumbnail image of graphical abstract

Local surface measurements of rubrene single crystals reveal interesting insights on carrier transport mechanisms at the active interface of high-performance field-effect “air-gap stamp” transistors. Scanning tunnelling microscopy (STM) images, combined with atomic force microscopy and X-ray diffraction, reveal directly the position and orientation of individual molecules in the a–b plane (see figure and inside cover). Local current–voltage curves recorded using STM in the dark and under light indicate a rectifying p-type behavior.

Get PDF (368K)