Large Electric Polarization and Exchange Bias in Multiferroic BiFeO3

Authors


  • This work was supported by Samsung Electronics and the UK Engineering and Physical Sciences Research Council.

Abstract

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Low-leakage BiFeO3 films have been grown with saturated ferroelectric hysteresis loops (see figure) and a very large remanent polarization. The antiferromagnetic nature of BiFeO3 films is confirmed by the appearance of an exchange bias in BiFeO3-based spin-valve multilayers. The results imply that there is potential for room-temperature applications of BiFeO3 that combine ferroelectric and antiferromagnetic functionality.

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