A UV-light-emitting homojunction ZnO LED is grown by radiofrequency sputtering at high temperature, improving the structural, electrical, and optical properties of the n- and p-type ZnO layers. The figure shows a comparison of the electroluminescence spectra of A) a p–n homojunction ZnO LED and B) a ZnO LED with Mg0.1Zn0.9O layers used as energy barrier layers. Such materials are of interest for their potential use in long-lifetime solid-state lighting, high-density information storage, secure communication, and chemical/biological-agent monitoring.
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