The work has been partly funded by Volkswagen Foundation, through the “Nanosized ferroelectric hybrids” project no. I/80897. Sincere thanks to S. Reyntjens and E. Sourty, both from FEI Application Laboratory (Eindhoven/NL), for the FIB preparation and STEM investigation, respectively, to N. D. Zakharov for HRTEM investigations, to S. Swatek for the TEM sample preparation, and N. Schammelt for assistance in the PLD system maintenance.
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Intrinsic Ferroelectric Properties of Strained Tetragonal PbZr0.2Ti0.8O3 Obtained on Layer–by–Layer Grown, Defect–Free Single–Crystalline Films†
Article first published online: 8 JUN 2006
DOI: 10.1002/adma.200502711
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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How to Cite
Vrejoiu, I., Le Rhun, G., Pintilie, L., Hesse, D., Alexe, M. and Gösele, U. (2006), Intrinsic Ferroelectric Properties of Strained Tetragonal PbZr0.2Ti0.8O3 Obtained on Layer–by–Layer Grown, Defect–Free Single–Crystalline Films. Adv. Mater., 18: 1657–1661. doi: 10.1002/adma.200502711
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Publication History
- Issue published online: 27 JUN 2006
- Article first published online: 8 JUN 2006
- Manuscript Accepted: 9 MAR 2006
- Manuscript Received: 20 DEC 2005
- Abstract
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Keywords:
- Ferroelectric materials;
- Single crystals;
- Thin films
Ferroelectric single–crystalline PbZr0.2Ti0.8O3 thin films, free from extended defects, are grown by pulsed laser deposition onto vicinal SrTiO3(001) single crystals. The PbZr0.2Ti0.8O3 films are strained and exhibit enhanced tetragonality, c/a ≈ 1.06. They have a remnant polarization, Pr ≈ 110 μC cm–2, dielectric constant, ϵ33 ≈ 90, and piezoelectric coefficient, d33, up to 50 pm V–1 (see figure).