The authors are grateful to T. Shimada and M. Lippmaa for fruitful discussions and English corrections.
Communication
High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates†
Article first published online: 8 JUN 2006
DOI: 10.1002/adma.200502752
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Itaka, K., Yamashiro, M., Yamaguchi, J., Haemori, M., Yaginuma, S., Matsumoto, Y., Kondo, M. and Koinuma, H. (2006), High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates. Adv. Mater., 18: 1713–1716. doi: 10.1002/adma.200502752
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Publication History
- Issue published online: 27 JUN 2006
- Article first published online: 8 JUN 2006
- Manuscript Accepted: 16 APR 2006
- Manuscript Received: 28 DEC 2005
- Abstract
- References
- Cited By
Keywords:
- Field-effect transistors, organic;
- Fullerenes;
- Pentacenes;
- Structure–property relationships;
- Thin films

An atomically flat pentacene monomolecular layer remarkably improved the crystallinity of C60 films, thus enhancing the field-effect mobilities in C60 transistors (FETs) (see figure). They showed a four to five times better performance over devices with C60 films grown without a pentacene buffer. Molecular-wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline organic devices.

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