The authors are grateful to T. Shimada and M. Lippmaa for fruitful discussions and English corrections.
High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates†
Article first published online: 8 JUN 2006
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 18, Issue 13, pages 1713–1716, July, 2006
How to Cite
Itaka, K., Yamashiro, M., Yamaguchi, J., Haemori, M., Yaginuma, S., Matsumoto, Y., Kondo, M. and Koinuma, H. (2006), High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates. Adv. Mater., 18: 1713–1716. doi: 10.1002/adma.200502752
- Issue published online: 27 JUN 2006
- Article first published online: 8 JUN 2006
- Manuscript Accepted: 16 APR 2006
- Manuscript Received: 28 DEC 2005
- Field-effect transistors, organic;
- Structure–property relationships;
- Thin films
An atomically flat pentacene monomolecular layer remarkably improved the crystallinity of C60 films, thus enhancing the field-effect mobilities in C60 transistors (FETs) (see figure). They showed a four to five times better performance over devices with C60 films grown without a pentacene buffer. Molecular-wetting-controlled substrates can thus offer a general solution to the fabrication of high-performance crystalline organic devices.