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Communication
UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes
Article first published online: 1 JUN 2006
DOI: 10.1002/adma.200502761
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Leong, E. S. P. and Yu, S. F. (2006), UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes. Adv. Mater., 18: 1685–1688. doi: 10.1002/adma.200502761
Publication History
- Issue published online: 27 JUN 2006
- Article first published online: 1 JUN 2006
- Manuscript Accepted: 31 MAR 2006
- Manuscript Received: 29 DEC 2005
- Abstract
- References
- Cited By
Keywords:
- Electroluminescence;
- Heterojunctions;
- Lasing, UV;
- Nanocomposites;
- Photoluminescence;
- Zinc oxide
UV random lasing in p–i–n ZnO-based heterojunction diodes is achieved. The UV emission originates from the use of an intrinsic ZnO–SiO2 nanocomposite layer; the use of ZnO powders can improve the electrical-to-optical conversion efficiency of the heterojunction. The patterned ZnO clusters in the SiO2 matrix enhance the quality of the random media (see figure) thus sustaining the random lasing action. If low-index, p-doped, wide-bandgap materials are used as the hole-injection layer, strong coherent random lasing could be achieved.