Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection-Rule Breaking

Authors


  • We acknowledge support from DARPA and ONR. S. G. C. and J. X. are thankful to NSERC and the Guggenheim Foundation, respectively, for support in the form of fellowships and to Dr. Marian Tzolov for fruitful discussions and help with the photocurrent spectroscopy measurements.

Abstract

original image

Enhanced radiative recombination in a periodically nanoengineered silicon- on-insulator structure (see figure and cover) is studied using micro-Raman, photoluminescence, and photocurrent spectroscopies. It is shown that the enhancement is due to phonon- localization effects, leading to a relaxation of the fundamental k-selection rule disfavoring light emission in bulk silicon.

Ancillary