High-Mobility p-Type Transistor Based on a Spin-Coated Metal Telluride Semiconductor


  • The authors thank Richard Ferlita and S. J. Chey for technical assistance.


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A crystalline CuInTe2 film is used as the channel layer in a thin-film field-effect transistor (see figure) yielding field-effect mobilities of over 10 cm2 V–1 s–1, which is approximately an order of magnitude better than previous results for spin-coated p-type systems. A novel three-component hydrazine-based solution is employed to achieve spin coating of the CuInTe2 film.