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Naphthyl End-Capped Quarterthiophene: A Simple Organic Semiconductor with High Mobility and Air Stability

Authors

  • H. K. Tian,

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • J. W. Shi,

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
    2. Graduate School of Chinese Academy of Sciences, Beijing 100039, P.R. China
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  • D. H. Yan,

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
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  • L. X. Wang,

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
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  • Y. H. Geng,

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
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  • F. S. Wang

    1. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P.R. China
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  • This work is supported by the 973 Project (2002CB613404) of Chinese Ministry of Science and Technology, NSFC (Nos. 20423003, 20474063, 20521415 and 90301008), Hundreds Talents Program of Chinese Academy of Sciences, and Distinguished Young Scholar Foundation of Jilin Province (No. 20040101). Supporting Information is available online from Wiley InterScience or from the author.

Abstract

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An organic semiconductor that can be mass produced is synthesized by end-capping quaterthiophene with naphthyl units (NaT4). An organic thin-film transistor (OTFT, see figure) has been fabricated using this organic semiconductor, and exhibits stability under ambient conditions with a mobility of up to 0.40 cm2 V–1 s–1.

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