Y.-L. L. and K. C. D. gratefully acknowledge funding from the Camille & Henry Dreyfus new Faculty Award, the National Science Foundation (DMR-0313707), the Keck Foundation, the Welch Foundation, and Ricoh Innovations, Inc. JEA acknowledges support from the Office of Naval Research.
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Communication
Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene†
Article first published online: 8 JUN 2006
DOI: 10.1002/adma.200600188
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Dickey, K. C., Anthony, J. E. and Loo, Y.-L. (2006), Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene. Adv. Mater., 18: 1721–1726. doi: 10.1002/adma.200600188
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Publication History
- Issue published online: 27 JUN 2006
- Article first published online: 8 JUN 2006
- Manuscript Accepted: 24 FEB 2006
- Manuscript Received: 27 JAN 2006
- Abstract
- References
- Cited By
Keywords:
- Electronics;
- Semiconductors, organic;
- Transistors
The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors can be improved dramatically by a simple and straightforward solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.