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Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene

Authors


  • Y.-L. L. and K. C. D. gratefully acknowledge funding from the Camille & Henry Dreyfus new Faculty Award, the National Science Foundation (DMR-0313707), the Keck Foundation, the Welch Foundation, and Ricoh Innovations, Inc. JEA acknowledges support from the Office of Naval Research.

Abstract

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The current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors can be improved dramatically by a simple and straightforward solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor for 2 min induces structural rearrangement and crystallization of TES ADT (see figure and cover). This procedure results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.

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