Advanced Materials

Self-Aligned Nanolenses with Multilayered Ge/SiO2 Core/Shell Structures on Si (001)


  • The research is supported by the Republic of China National Science Council grant No. NSC 94-2215-E-007-003 and Ministry of Education grant No. 91-E-FA04-1-4.


Selective etching of multilayered Ge-quantum-dot/Si-spacer has been used to fabricate stacked Ge@SiO2 nanolenses with the ability to filter and focus 1.5 μm light. These lenses have potential for use as Si-compatible photodetector materials for telecommunications. The left figure is a schematic sketch of the nanolenses and the right figure is a transmission electron microscopy image of the lenses.

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