In-Plane Bandgap Engineering by Modulated Hydrogenation of Dilute Nitride Semiconductors

Authors


  • We thank J. Chevallier for raising our attention to reference [21].

Abstract

original image

In-plane bandgap engineering of dilute nitrides by spatially delimited hydrogen irradiation (left, microphotoluminescence image of GaAsN) or displacement (right, cathodoluminescence image of hydrogenated GaAsN) is reported.

Ancillary