Surface-Induced Self-Encapsulation of Polymer Thin-Film Transistors


  • The authors gratefully acknowledge Y. Wu, P. Liu and B. Ong of the Xerox Research Center of Canada for providing samples of PQT-12; I. McCulloch of Merck for providing samples of P3HT; and A. Salleo, J. Daniel, M. L. Chabinyc, and W. S. Wong of PARC for helpful discussions.


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Surface-induced phase separation in polymer blends is used to fabricate self-encapsulated thin-film transistors. The semiconductor material preferentially wets the gate dielectric surface and a self-organized bilayer of two polymers phases occurs spontaneously (see figure). The encapsulant and semiconductor are deposited in one step.