A. L. B. acknowledges the Bell Labs Graduate Research Fellowship. A. L. B., F. W., R. J. T., and Y. Y. acknowledge financial support from the Air Force Office of Scientific Research (AFOSR, grant number F49620-03-10101). Z. B. acknowledges partial support from the Stanford Center for Polymeric Interfaces and macromolecular Assemblies (NSF-Center MRSEC under Award DMR-0213618) and the Stanford School of Engineering. We acknowledge valuable discussions with Mr. Colin Reese, Sheng-Han Li, and Drs. Chih-Wei Chu and Qian Miao. A. L. B. and R. J. T. contributed equally to this work. Supporting Information is available online from Wiley InterScience or from the author.
Communication
High-Performance Organic Single-Crystal Transistors on Flexible Substrates†
Article first published online: 28 AUG 2006
DOI: 10.1002/adma.200600634
Copyright © 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Briseno, A. L., Tseng, R. J., Ling, M.-M., Falcao, E. H. L., Yang, Y., Wudl, F. and Bao, Z. (2006), High-Performance Organic Single-Crystal Transistors on Flexible Substrates. Adv. Mater., 18: 2320–2324. doi: 10.1002/adma.200600634
- †
Publication History
- Issue published online: 28 AUG 2006
- Article first published online: 28 AUG 2006
- Manuscript Accepted: 24 MAY 2006
- Manuscript Received: 24 MAR 2006
Funded by
- Bell Labs Graduate Research Fellowship
- Air Force Office of Scientific Research. Grant Number: F49620-03-10101
- Stanford Center for Polymeric Interfaces and macromolecular Assemblies. Grant Number: DMR-0213618
- Stanford School of Engineering
Keywords:
- Crystal growth;
- Field-effect transistors;
- Flexible electronics;
- Single crystals

Flexible and conformable organic single crystals as thin as 150 nm are used for fabricating mechanically bendable organic single-crystal field-effect transistors on low-cost plastic substrates (see figure and cover). We report effective field-effect mobility as high as 4.6 cm2 V–1 s–1 for a flexible rubrene single-crystal transistor, on/off ratio of ca. 106, threshold voltage of – 2.1 V, and a normalized subthreshold swing of 0.9 V nF decade–1 cm–2.

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