Advanced Materials

Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates

Authors

  • Y. Sun,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    2. Present address: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
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  • V. Kumar,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • I. Adesida,

    1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • J. A. Rogers

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • This work was supported by the U.S. Department of Energy under grant DEFG02-91-ER45439. The fabrication and measurements were carried out using the facilities located in the Microfabrication Laboratory and Center for Microanalysis of Materials of Frederick Seitz Materials Research Laboratory, which are supported by Department of Energy. The authors thank Dr. Zheng-Tao Zhu for help in AFM measurement and Mr. Matthew A. Meitl for useful discussion.

Abstract

Single-crystalline GaAs ribbons with thicknesses in the sub-micrometer range are fabricated with well-defined “wavy” (top) and “buckled” (bottom) geometries (see figure and inside cover). The resulting structures, on the surface of or embedded in an elastomeric substrate, exhibit reversible stretchability and compressibility to strains >10%, more than five times larger than that of GaAs itself. By integrating ohmic and Schottky contacts, high-performance stretchable electronic devices (e.g., metal semiconductor field-effect transistors) can be achieved.

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