Interface-Controlled, High-Mobility Organic Transistors

Authors


  • We thank P. Blom, M. Mulder, and J. Harkema for the use of their evaporation equipment. This work was supported by the MSCplus (Materials Science Center) and FOM (Stichting voor Fundamenteel Onderzoek der Materie).

Abstract

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The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the manipulation of interface states. A reliable method for fabricating FETs, which involves careful control of the semiconductor/gate interface (see figure), is presented.

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