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A Low-Temperature-Grown Oxide Diode as a New Switch Element for High-Density, Nonvolatile Memories


  • One of us (B.H.P.) was supported by the Samsung Advanced Institute of Technology through the Basic Research Program of the Korea Science and Engineering Foundation, grant No. R01-2006-000-10883-0, a Korean Research Foundation Grant (KRF-2004-005-D00046), Seoul R&BD Program, a grant from the Center for Applied Superconductivity Technology of the 21st Century Frontier R&D Program funded by MOST, and the National Research Program for the 0.1 Terabit Nonvolatile Memory Development, sponsored by the Korea Ministry of Commerce, Industry, and Energy.


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A one-diode/one-resistor structure, Pt/NiO/Pt/p-NiOx/n-TiOx/Pt, has been fabricated. This novel structure exhibits bistable resistance switching under forward bias, while the diode suppresses resistance switching in the Pt/NiO/Pt memory cell under reverse bias (see figure). Its low processing temperature and small cell size, as well as excellent rectifying characteristics, make this Pt/p-NiOx/n-TiOx/Pt diode structure a promising switch element for high- density, nonvolatile memory devices with 3D stack and cross-point structures.

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