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Efficient Top-Gate, Ambipolar, Light-Emitting Field-Effect Transistors Based on a Green-Light-Emitting Polyfluorene


  • The authors thank Cambridge Display Technologies Ltd. for materials. J. Z. thanks the Gates Cambridge Trust for financial support.


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Bright, ambipolar, light-emitting polymer field-effect transistors in a bottom-contact/top-gate structure using poly(9,9-di-n-octylfluorene-alt- benzothiadiazole) (F8BT) as a green-emitting semiconductor show balanced hole and electron mobilities, depending on the polymer dielectric. The emission zone, observed as a bright line in the figure, is well defined and can be moved through the channel.

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