Poly(2,5-bis(2-thienyl)-3,6-dialkylthieno [3,2-b]thiophene)s—High-Mobility Semiconductors for Thin-Film Transistors


  • Partial financial support of this work is provided by the National Institute of Standards and Technology through an Advanced Technology Grant (70NANB0H3033). The assistance of our colleague, Ms. Sandra Gardner, in XRD measurements and analysis is gratefully acknowledged.


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Field-effect transistor properties, structural design, synthesis, and characterization of the poly(2,5-bis(2-thienyl)-3,6-dialkylthieno[3,2-b]thiophene) thin-film semiconductors shown in the figure are described. Using low-temperature solution fabrication of channel semiconductors under ambient conditions, a mobility of 0.25 cm2 V–1 s–1 and a current on/off ratio of 107 are obtained.