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Keywords:

  • Field-effect transistors;
  • Hole transport;
  • Semiconductors, organic;
  • Thin films, polymer
Thumbnail image of graphical abstract

The orientation and π-interaction of the frontier layers of regioregular poly(3-hexylthiophene) at both the air and substrate interfaces are directly measured for the first time using near-edge X-ray absorption fine-structure spectroscopy for thin films cast from a series of solvents (see figure). Results suggest the already high hole mobility in this material is still substantially limited by disorder at the interfaces.