Localized Pressure-Induced Ferroelectric Pattern Arrays of Semicrystalline Poly(vinylidene fluoride) by Microimprinting

Authors


  • This work was supported by grants for R&D programs for Opto-electromagnetic Advanced Materials, NGNT (10024135-2005-11), and the 0.1 Terabit Nonvolatile Memory Development projects, and a grant (f0004091) from the Information Display R&D Center, one of the 21st Century Frontier R&D Programs funded by the Ministry of Commerce, Industry and Energy of the Korean Government. We are also grateful for financial support from Samsung Electronics, Co., Ltd. The X-ray experiments at PAL (4C2 beamline), Korea, were supported by MOST and POSCO, Korea. We appreciate Mr. J.-H. Choi's help with SEM. This work was supported by the Second Stage of Brain Korea 21 Project in 2006 and by the Seoul Science Fellowship.

Abstract

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A polymer ferroelectric array embedded in an insulating paraelectric medium, with potential uses in nonvolatile memories, is fabricated by microimprinting poly(vinylidene fluoride) (PVDF) a patterned poly(dimethylsiloxane) with mold. The localized pressure induces a polymorphic transition into ferroelectric γ-type PVDF, whereas the unpressed raised areas (see figure) remain of the α type (paraelectric).

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