Photocurable Organic Gate Insulator for the Fabrication of High-Field Effect Mobility Organic Transistors by Low Temperature and Solution Processing


  • The authors thank I. Y. Song and Y. N. Kwon for experimental help with atomic force microscopy, Dr. Y. M. Son for help with the imprint lithography, and Dr. T. L. Choi for careful reading of this manuscript.


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A new organic gate insulator in OTFT devices, which satisfies the requirements for the fabrication of a practical TFT array, such as a good chemical resistance, a low moisture uptake, a low temperature process, and a good film surface smoothness, is introduced. Since this gate insulator film is formed by photo-curing after spincasting on the top of the gate electrode, the process does not require high temperatures.