High-Performance Bottom-Contact Organic Thin-Film Transistors with Controlled Molecule-Crystal/Electrode Interface

Authors


  • The work is partially supported by “21st Century Center of Excellence Program: Frontiers of Super-Functionality Organic Devices” at Chiba University. The authors thank Mr. H. Yamauchi, Mr. H. Tomii, and Mr. N. Ohashi for help with the techniques used.

Abstract

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An improvement of the performance of bottom-contact organic thin-film transistors is demonstrated by embedding and planarizing the source/drain electrodes in a gate dielectric. The electric contact with the pentacene active layer is superior to conventional electrode configurations because of the favorable growth of pentacene grains adjacent to the source/drain electrode edges: these can be seen in the figure.

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