Realization of Room-Temperature Ferromagnetism and of Improved Carrier Mobility in Mn-Doped ZnO Film by Oxygen Deficiency, Introduced by Hydrogen and Heat Treatments


  • This research was performed with financial support from KOSEF through the Quantum Photonic Science Research Center, and MOST, Korea. We acknowledge Dr. Jong Han Song of Korea Institute of Science and Technology (KIST) for help in performing the H-implantation;. We also thank Dr. Jae Chul Lee of Samsung Advanced Institute of Technology for the TOF-SIMS experiment.


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The room-temperature ferromagnetic (RTFM) ordering with a very low carrier mobility occurs in polycrystalline Mn-doped ZnO film with δ ∼ 0.04. We successfully fabricated RTFM Zn0.96Mn0.04O:H film with a substantially improved carrier mobility (∼ 400% larger than that of the as-grown sample) through the hydrogen-implantation and a subsequent heat treatment.