Growth and Electronic Transport in 9,10-Diphenylanthracene Single Crystals—An Organic Semiconductor of High Electron and Hole Mobility

Authors


  • The Deutsche Forschungsgemeinschaft (DFG) is acknowledged for financial support in the project No. PF385/2-3. T. S. is supported in part by the U.S. Department of Energy, contract DE-FG02-04ER46118.

Abstract

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Electron and hole transport is demonstrated on bulk crystals of the organic semiconductor 9,10-diphenylanthracene (DPA). The high mobilities at room temperature for electrons (ca. 13 cm2 Vs–1) and holes (ca. 3.7 cm2 Vs–1) make DPA a prominent candidate for device applications. The hole mobility follows a bandlike transport at high temperatures (200K–400K) and a saturation behavior in the low-temperature regime (see figure), the latter being discussed in the context of various transport models.

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