This work was performed through the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sport, Science, and Technology of the Japanese Government, Program for Specially Appointed Professor by East China University of Science and Technology, the National Natural Science Foundation of China (Grant 20236020), and the Major Basic Research Project of Shanghai (China) (Grant 04DZ14002). The authors thank Mr. T. Sasaki for TEM technical support.
Mg3N2-Ga: Nanoscale Semiconductor–Liquid Metal Heterojunctions inside Graphitic Carbon Nanotubes†
Article first published online: 20 APR 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 10, pages 1342–1346, May, 2007
How to Cite
Hu, J. Q., Bando, Y., Zhan, J. H., Li, C. Z. and Golberg, D. (2007), Mg3N2-Ga: Nanoscale Semiconductor–Liquid Metal Heterojunctions inside Graphitic Carbon Nanotubes. Adv. Mater., 19: 1342–1346. doi: 10.1002/adma.200602182
- Issue published online: 16 MAY 2007
- Article first published online: 20 APR 2007
- Manuscript Revised: 22 NOV 2006
- Manuscript Received: 25 SEP 2006
- Ministry of Education, Culture, Sport, Science, and Technology of the Japanese Government
- National Natural Science Foundation of China. Grant Number: 20236020
- Major Basic Research Project of Shanghai. Grant Number: 04DZ14002
- Carbon nanotubes;
Mg3N2-Ga nanoscale semiconductor–liquid metal heterojunctions homogeneously coated with very thin graphitic carbon nanotube (GCNT) layers are fabricated (see figure). Most of the junctions have a uniform diameter of ca. 100–200 nm. GCNTs coated on the nanowire junctions are only several nanometers thick. A convergent electron beam generated in a transmission electron microscope is demonstrated to be an effective tool for delicate manipulation of a junction.