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Keywords:

  • Conductivity, electrical;
  • Microelectronics;
  • Nanocomposites;
  • Nanostructures;
  • Scanning probe microscopy
Thumbnail image of graphical abstract

IR scattering-type near-field microscopy is applied to simultaneously map material composition and conduction properties in cross-sectional samples of industrial bipolar and metal-oxide- semiconductor devices with nanoscale spatial resolution. Within a single mid-IR image, all relevant materials such as metals, Si, Si3N4, and oxides can be identified by material-specific amplitude and phase contrasts.