Communication

Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition†

  1. A. Fontcuberta i Morral1,
  2. J. Arbiol2,
  3. J. D. Prades3,
  4. A. Cirera3,
  5. J. R. Morante3

Article first published online: 20 APR 2007

DOI: 10.1002/adma.200602318

Issue

Advanced Materials

Advanced Materials

Volume 19, Issue 10, pages 1347–1351, May, 2007

Additional Information

How to Cite

Fontcuberta i Morral, A., Arbiol, J., Prades, J., Cirera, A. and Morante, J. (2007), Synthesis of Silicon Nanowires with Wurtzite Crystalline Structure by Using Standard Chemical Vapor Deposition. Advanced Materials, 19: 1347–1351. doi: 10.1002/adma.200602318

Author Information

  1. 1

    Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 86748 Garching (Germany)

  2. 2

    TEM-MAT, Serveis Cientificotècnics, Universitat de Barcelona, C/Lluís Sole i Sabarís 1-3, 08028 Barcelona, CAT (Spain)

  3. 3

    EME/CeRMAE/IN2UB, Departament d'Electrònica, Universitat de Barcelona, C/Martí i Franquès 1, 08028 Barcelona, CAT (Spain)

  1. †

    The authors kindly thank Prof. Gerhard Abstreiter for helpful discussions, and the financial support of the Marie Curie Excellence Grant (Project MEXT-CT-2006-042721, “SENFED”).

Publication History

  1. Issue published online: 16 MAY 2007
  2. Article first published online: 20 APR 2007
  3. Manuscript Revised: 19 JAN 2007
  4. Manuscript Received: 12 OCT 2006

Funded by

  • Marie Curie Excellence Grant. Grant Number: MEXT-CT-2006-042721, “SENFED”

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Keywords:

  • Chemical vapor deposition;
  • Nanowires;
  • Silicon;
  • Vapor–liquid–solid synthesis;
  • Wurtzite

Graphical Abstract

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Silicon nanowires—filamentary crystals with a very high ratio of length to diameter (see figure)—allow growth of the wurtzite crystalline phase, which is also semiconducting for silicon. The association of this phenomenon with the competition between surface energy and pressure effects occurring at diameters below 150 nm is shown.

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