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High Ambipolar Mobility in a Highly Ordered Smectic Phase of a Dialkylphenylterthiophene Derivative That Can Be Applied to Solution-Processed Organic Field-Effect Transistors

Authors

  • M. Funahashi,

    1. Molecular Smart System Group, Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5-2, Higashi 1-1-1, Tsukuba, Ibaraki 305-8565, Japan
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  • F. Zhang,

    1. Molecular Smart System Group, Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5-2, Higashi 1-1-1, Tsukuba, Ibaraki 305-8565, Japan
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  • N. Tamaoki

    1. Molecular Smart System Group, Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba Central 5-2, Higashi 1-1-1, Tsukuba, Ibaraki 305-8565, Japan
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  • This research is financially supported by NEDO industrial technology research grant, Grant in Aid for Scientific Research (No. 16750185) from the ministry of education, culture, sports, science and technology. We would like to thank Dr. M. Chikamatsu and Dr. R. Azumi from the Photonics Research Institute of AIST for their fruitful advice on fabrication and characterization of FET devices. We also thank Dr. H. Minmikawa for the X-ray diffraction measurement. Supporting Information is available online from Wiley InterScience or from the author.

Abstract

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A phenylterthiophene derivative that exhibits a highly ordered smectic phase around room temperature is synthesized. In the bulk of the smectic phase, ambipolar carrier transport is observed and electron mobility exceeds 0.2 cm2 V–1 s–1. Thin-film transistors (see the AFM image in the figure) are fabricated by a spin-coating method and exhibit p-type operation, a field-effect mobility of 0.02 cm2 V–1 s–1, and an on/off ratio of 106.

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