We are grateful to Rui Zhang for the TMAFM images, and to Suresh Santhanam, Jessica Cooper, Dr. Mihaela Iovu, Prof. Tomask Kowalewski, Bo Li, and Prof. David Greve for their help at various stages of this work. Financial support was provided by the National Science Foundation (CHE0415369).
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Communication
High Field-Effect Mobilities for Diblock Copolymers of Poly(3-hexylthiophene) and Poly(methyl acrylate)†
Article first published online: 25 JUN 2007
DOI: 10.1002/adma.200602368
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Sauvé, G. and McCullough, R. D. (2007), High Field-Effect Mobilities for Diblock Copolymers of Poly(3-hexylthiophene) and Poly(methyl acrylate). Adv. Mater., 19: 1822–1825. doi: 10.1002/adma.200602368
- †
Publication History
- Issue published online: 6 JUL 2007
- Article first published online: 25 JUN 2007
- Manuscript Revised: 12 JAN 2007
- Manuscript Received: 17 OCT 2006
Funded by
- National Science Foundation. Grant Number: CHE0415369
- Abstract
- References
- Cited By
Keywords:
- Block copolymers;
- Field-effect transistors;
- Organic electronics;
- Semiconductors, organic;
- Thiophenes
High field-effect mobilities from diblock copolymers of regioregular poly(3-hexylthiophene) and poly(methyl acrylate) (PMA) are reported. The mobilities are achieved at several PMA contents provided the SiO2 surface is treated with octyltrichlorosilane. The mobility decreases with increasing PMA content when the SiO2 surface is untreated. These results show the importance of self-assembly at the interface for good FET performance in bottom-contact FET devices.