Communication

Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer†

  1. Y. H. Niu1,
  2. A. M. Munro2,
  3. Y.-J. Cheng1,
  4. Y. Q. Tian1,
  5. M. S. Liu1,
  6. J. L. Zhao2,
  7. J. A. Bardecker1,
  8. I. Jen-La Plante2,
  9. D. S. Ginger2,
  10. A. K.-Y. Jen1,2

Article first published online: 25 SEP 2007

DOI: 10.1002/adma.200602373

Issue

Advanced Materials

Advanced Materials

Special Issue: Special Section on Bionanotechnology

Volume 19, Issue 20, pages 3371–3376, October, 2007

Additional Information

How to Cite

Niu, Y. H., Munro, A. M., Cheng, Y.-J., Tian, Y. Q., Liu, M. S., Zhao, J. L., Bardecker, J. A., Jen-La Plante, I., Ginger, D. S. and Jen, A. K.-Y. (2007), Improved Performance from Multilayer Quantum Dot Light-Emitting Diodes via Thermal Annealing of the Quantum Dot Layer. Adv. Mater., 19: 3371–3376. doi: 10.1002/adma.200602373

Author Information

  1. 1

    Department of Materials Science and Engineering, Box 352120, University of Washington, Seattle, WA 98195 (USA)

  2. 2

    Department of Chemistry, Box 351700, University of Washington, Seattle, WA 98195 (USA)

  1. †

    This work was supported by the National Science Foundation (NSF-STC program under DMR-0120967 and DMR-0449442). Supporting Information is available online at Wiley InterScience or from the author.

Publication History

  1. Issue published online: 17 OCT 2007
  2. Article first published online: 25 SEP 2007
  3. Manuscript Revised: 29 DEC 2006
  4. Manuscript Received: 18 OCT 2006

Funded by

  • National Science Foundation. Grant Numbers: DMR-0120967, DMR-0449442

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Keywords:

  • Hole-transport materials;
  • Light-emitting diodes;
  • Nanocrystals;
  • Quantum dots;
  • Thermal crosslink
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Quantum dot light-emitting diodes with high external quantum efficiency and luminous power efficiency are realized through in situ thermal annealing of a quasi-monolayer of colloidal nanocrystals on a crosslinked hole-transport layer. Partial desorption of quantum-dot surface ligands and improved film morphology contribute to better electrical injection from the organic layers to the quantum dots, resulting in a 3 to 4 fold enhancement of device efficiency with emission exclusively from the quantum dots.

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