The authors thank Mr. T. Kurauchi (Osaka University) for fruitful discussions related to XRD and FET measurements. Supporting Information is available from Wiley InterScience of from the author.
High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor†
Article first published online: 20 JUN 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 14, pages 1864–1868, July, 2007
How to Cite
Oikawa, K., Monobe, H., Nakayama, K., Kimoto, T., Tsuchiya, K., Heinrich, B., Guillon, D., Shimizu, Y. and Yokoyama, M. (2007), High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor. Adv. Mater., 19: 1864–1868. doi: 10.1002/adma.200602608
- Issue published online: 6 JUL 2007
- Article first published online: 20 JUN 2007
- Manuscript Revised: 22 FEB 2007
- Manuscript Received: 16 NOV 2006
- Liquid crystals;
- Liquid-crystal alignment;
- Semiconductors, organic
A novel calamitic mesophase semiconductor based on symmetrically designed thiophene–naphthalene, 2,6-di(5′-n-octyl-2′-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm2 V–1s–1 in a polycrystalline film at room temperature.