High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

Authors


  • The authors thank Mr. T. Kurauchi (Osaka University) for fruitful discussions related to XRD and FET measurements. Supporting Information is available from Wiley InterScience of from the author.

Abstract

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A novel calamitic mesophase semiconductor based on symmetrically designed thiophene–naphthalene, 2,6-di(5′-n-octyl-2′-thienyl)naphthalene, is used as the active layer in a field-effect transistor and the device performance is studied (see figure). This mesogen has an excellently high mobility of 0.14 cm2 V–1s–1 in a polycrystalline film at room temperature.

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