Dr. T. Anthopoulos, Imperial College, London, Dr. J. Veres, Kodak, Rochester, USA, and Prof. P. Blom, University of Groningen, are gratefully acknowledged for stimulating discussions. We also gratefully acknowledge the financial support received from the EC (project PolyApply IST-IP-507143). The work of E.C.P.S. forms part of the Dutch Polymer Institute (DPI) research program (project no. 516).
Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors†
Article first published online: 21 AUG 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 19, pages 2785–2789, October, 2007
How to Cite
Mathijssen, S. G. J., Cölle, M., Gomes, H., Smits, E. C. P., de Boer, B., McCulloch, I., Bobbert, P. A. and de Leeuw, D. M. (2007), Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors. Adv. Mater., 19: 2785–2789. doi: 10.1002/adma.200602798
- Issue published online: 1 OCT 2007
- Article first published online: 21 AUG 2007
- Manuscript Revised: 9 MAR 2007
- Manuscript Received: 6 DEC 2006
- EC. Grant Number: IST-IP-507143
- Field-effect transistors;
- Organic field-effect transistors;
The electrical instability of organic field-effect transistors is investigated. We observe that the threshold-voltage shift (see figure) shows a stretched- exponential time dependence under an applied gate bias. The activation energy of 0.6 eV is common for our and all other organic transistors reported so far. The constant activation energy supports charge trapping by residual water as the common origin.