We acknowledge financial support from the State Key Program for Basic Research of China (No. 2006CB932202) and the National Nature Science Foundation of China (Nos. 90301009, 60571008, 60471021, and 60425414).
Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism†
Article first published online: 23 MAY 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 12, pages 1577–1581, June, 2007
How to Cite
Yu, L. W., Chen, K. J., Song, J., Xu, J., Li, W., Li, H. M., Wang, M., Li, X. F. and Huang, X. F. (2007), Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism. Adv. Mater., 19: 1577–1581. doi: 10.1002/adma.200602804
- Issue published online: 13 JUN 2007
- Article first published online: 23 MAY 2007
- Manuscript Revised: 6 FEB 2007
- Manuscript Received: 7 DEC 2006
- State Key Program for Basic Research of China. Grant Number: 2006CB932202
- National Nature Science Foundation of China. Grant Numbers: 90301009, 60571008, 60471021, 60425414
Vol. 19, Issue 18, 2412, Article first published online: 10 SEP 2007
- Chemical vapor deposition, plasma-enhanced;
Self-assembled Si quantum-ring structures on a Si(100) substrate are fabricated by using a PECVD technique based on a growth–etching competition mechanism. The as-grown Si ring structures have superior morphology, excellent rotational symmetry, and ultrathin edge width (down to 10 nm, see figure). This growth model also represents a general scheme for controlling and tailoring the shape, size, and complexity of self-assembled nanostructures.