Advanced Materials

Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism

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Errata

This article is corrected by:

  1. Errata: Self-Assembled Si Quantum-Ring Structures on a Si Substrate by Plasma-Enhanced Chemical Vapor Deposition Based on a Growth-Etching Competition Mechanism Volume 19, Issue 18, 2412, Article first published online: 10 September 2007

  • We acknowledge financial support from the State Key Program for Basic Research of China (No. 2006CB932202) and the National Nature Science Foundation of China (Nos. 90301009, 60571008, 60471021, and 60425414).

Abstract

Self-assembled Si quantum-ring structures on a Si(100) substrate are fabricated by using a PECVD technique based on a growth–etching competition mechanism. The as-grown Si ring structures have superior morphology, excellent rotational symmetry, and ultrathin edge width (down to 10 nm, see figure). This growth model also represents a general scheme for controlling and tailoring the shape, size, and complexity of self-assembled nanostructures.

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