A New Scenario in Probe Local Oxidation: Transient Pressure-Wave-Assisted Ionic Spreading and Oxide Pattern Formation

Authors

  • X. N. Xie,

    1. NUS Nanoscience and Nanotechnology Initiative (NUSNNI), National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore)
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  • H. J. Chung,

    1. NUS Nanoscience and Nanotechnology Initiative (NUSNNI), National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore)
    2. Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 (Singapore)
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  • Z. J. Liu,

    1. Institute for High Performance Computing (IHPC), 1 Science Park Road, 117528 Singapore (Singapore)
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  • S.-W. Yang,

    1. Institute for High Performance Computing (IHPC), 1 Science Park Road, 117528 Singapore (Singapore)
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  • C. H. Sow,

    1. NUS Nanoscience and Nanotechnology Initiative (NUSNNI), National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore)
    2. Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 (Singapore)
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  • A. T. S. Wee

    1. NUS Nanoscience and Nanotechnology Initiative (NUSNNI), National University of Singapore, 2 Science Drive 3, 117542 Singapore (Singapore)
    2. Department of Physics, National University of Singapore, 2 Science Drive 3, 117542 (Singapore)
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  • This work is supported by the NUS Nanoscience and Nanotechnology Initiative (NUSNNI), at the National University of Singapore.

Abstract

original image

A new mechanism based on transient shock-wave-assisted lateral ionic spreading and oxide growth is reported for atomic force microscopy probe local oxidation (see figure). Transitory high pressure waves generated in the nanoscopic tip–sample junction significantly extend the distribution of hydroxyl oxidants to facilitate micrometer-scale disk-oxide growth on a silicon substrate. The results show that shock propagation may be a general phenomenon in AFM nanolithography.

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