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Keywords:

  • Dielectrics;
  • Nanoimprint lithography;
  • Nanoporous materials;
  • Patterning
Thumbnail image of graphical abstract

Nanoscale parallel line-space patterns are imprinted into a spin-on organosilicate thin film that contains a second phase pore generating material (porogen). Imprints are converted into nanoporous low-dielectric patterns by vitrification at 430 °C where the porogen is volatilized and creates nanoscale pores (2.2 nm) in the vitrified organosilicate network (see figure). The results are well-defined, high-modulus, nanoporous patterns with an estimated dielectric constant of k∼2.4.