The Direct Patterning of Nanoporous Interlayer Dielectric Insulator Films by Nanoimprint Lithography


  • Official contribution of the National Institute of Standards and Technology; not subject to copyright in the United States. The error bars presented throughout this manuscript indicate the relative standard uncertainty of the measurement. Certain commercial materials and equipment are identified in this paper in order to specify adequately the experimental procedure. In no case does such identification imply recommendation by the National Institute of Standards and Technology nor does it imply that the material or equipment identified is necessarily the best available for this purpose. This work was supported in part by the System IC 2010 Project of Korea, the Chemistry and Molecular Engineering Program of Brain Korea 21 Project, and the NIST Office of Microelectronics Programs. We also acknowledge the Nanofabrication Laboratory in the NIST Center for Nanoscale Science and Technology (CNST) for the use of their facilities. Supporting Information is available online from Wiley InterScience or from the authors.


original image

Nanoscale parallel line-space patterns are imprinted into a spin-on organosilicate thin film that contains a second phase pore generating material (porogen). Imprints are converted into nanoporous low-dielectric patterns by vitrification at 430 °C where the porogen is volatilized and creates nanoscale pores (2.2 nm) in the vitrified organosilicate network (see figure). The results are well-defined, high-modulus, nanoporous patterns with an estimated dielectric constant of k∼2.4.