Advanced Materials

Tunable and Predetermined Bandgap Emissions in Alloyed ZnSxSe1–x Nanowires

Authors

  • M. Wang,

    1. Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031 (P.R. China)
    Search for more papers by this author
  • G. T. Fei,

    1. Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031 (P.R. China)
    Search for more papers by this author
  • Y. G. Zhang,

    1. Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031 (P.R. China)
    Search for more papers by this author
  • M. G. Kong,

    1. Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031 (P.R. China)
    Search for more papers by this author
  • L. D. Zhang

    1. Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei 230031 (P.R. China)
    Search for more papers by this author

  • This work was supported by the National Natural Science Foundation of China (No.50671099, 50172048, 10374090, and 10274085), Ministry of Science and Technology of China (No.2005CB623603), Hundred Talent Program of Chinese Academy of Sciences, Talent Foundation of Anhui Province (2002Z020), and Ningbo Natural Science Foundation (2006A610062). Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

Photoluminescence measurements show that the tunable bandgap emissions of the alloyed ZnSxSe1–x nanowires shift continuously from 370 nm to 463 nm. According to the experimental results, predetermined bandgap emissions can be obtained via synthesizing alloyed ZnSxSe1–x nanowires with the corresponding composition x.

original image

Ancillary