This work was supported by the National Science Foundation (DMR-0413523) and by the U.S. Department of Energy, Center for Integrated Nanotechnologies, at Los Alamos National Laboratory (Contract W-7405-ENG-36).
Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence†
Article first published online: 9 AUG 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 19, Issue 18, pages 2603–2607, September, 2007
How to Cite
Aella, P., Ingole, S., Petuskey, W. T. and Picraux, S. T. (2007), Influence of Plasma Stimulation on Si Nanowire Nucleation and Orientation Dependence. Adv. Mater., 19: 2603–2607. doi: 10.1002/adma.200602944
- Issue published online: 10 SEP 2007
- Article first published online: 9 AUG 2007
- Manuscript Revised: 6 JUN 2007
- Manuscript Received: 24 DEC 2006
- National Science Foundation. Grant Number: DMR-0413523
- U.S. Department of Energy, Center for Integrated Nanotechnologies, at Los Alamos National Laboratory. Grant Number: W-7405-ENG-36
- Nanowires, inorganic;
Silicon nanowires are grown epitaxially on Si (100) surfaces using thermal (a) and rf plasma excitation (b) for vapor–liquid–solid (VLS) growth. Plasma excitation at low growth temperatures promotes the nucleation of smaller diameter  oriented Si nanowires and is attributed to a plasma-induced increase in silicon chemical potential; it also increases low temperature nanowire growth rates (see figure). The rate limiting step in VLS growth here is due to silicon incorporation at the vapor-liquid interface. Plasma excitation enables additional control over nanowire orientation.