Cover Picture: Enhancement of Radiative Recombination in Silicon via Phonon Localization and Selection-Rule Breaking (Adv. Mater. 7/2006)



The cover shows a low-magnification TEM image of a periodically nanopatterned all-silicon structure exhibiting enhanced light emission at room temperature. The microstructure was studied using high-resolution TEM, allowing direct observation of high densities of structural defects in the nanopatterned silicon surface layer, which are held responsible for the phonon-localization effect leading to enhanced radiative recombination, as reported on p. 841 by Xu and co-workers.