Cover Picture

Cover Picture: Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene (Adv. Mater. 13/2006)

  1. K. C. Dickey1,
  2. J. E. Anthony2,
  3. Y.-L. Loo1

Article first published online: 27 JUN 2006

DOI: 10.1002/adma.200690053

Issue

Advanced Materials

Advanced Materials

Volume 18, Issue 13, page n/a, July, 2006

Additional Information

How to Cite

Dickey, K. C., Anthony, J. E. and Loo, Y.-L. (2006), Cover Picture: Improving Organic Thin-Film Transistor Performance through Solvent-Vapor Annealing of Solution-Processable Triethylsilylethynyl Anthradithiophene (Adv. Mater. 13/2006). Adv. Mater., 18: n/a. doi: 10.1002/adma.200690053

Author Information

  1. 1

    Department of Chemical Engineering and, Center for Nano- and Molecular Science and Technology, University of Texas at Austin, Austin, TX 78712, USA

  2. 2

    Department of Chemistry, University of Kentucky, Lexington, KY 40506, USA

Publication History

  1. Issue published online: 27 JUN 2006
  2. Article first published online: 27 JUN 2006

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Keywords:

  • Electronics;
  • Semiconductors, organic;
  • Transistors

Abstract

In work reported by Loo and co-workers on p. 1721, the current–voltage characteristics of triethylsilylethynyl anthradithiophene (TES ADT) thin-film transistors are improved dramatically by a simple solvent-vapor annealing process after device fabrication. Exposing the transistors to dichloroethane vapor induces structural rearrangement and crystallization of TES ADT, as shown on the cover (lower section, before annealing, upper section, after). The annealing results in drastic increases in on currents; the saturation mobility increases by two orders of magnitude and the current–voltage hysteresis is largely eliminated.

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