Inside Front Cover: Buckled and Wavy Ribbons of GaAs for High-Performance Electronics on Elastomeric Substrates (Adv. Mater. 21/2006)

Authors

  • Y. Sun,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
    2. Present address: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, IL 60439, USA
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  • V. Kumar,

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • I. Adesida,

    1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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  • J. A. Rogers

    1. Department of Materials Science and Engineering, Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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Abstract

Stretchable single-crystalline GaAs nanoribbons and stretchable electronic devices fabricated with these ribbons are reported on p. 2857 by Sun, Rogers, and co-workers. The inside cover shows an array of ‘wavy' GaAs nanoribbons (background) sitting on an elastomeric poly(dimethylsiloxane) (PDMS) support. Wavy and buckled ribbons integrated with metal electrodes (foreground inset) enable high-performance, fully stretchable electronics, i.e., metal–semiconductor field-effect transistors.

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