SEARCH

SEARCH BY CITATION

Keywords:

  • Doping;
  • Semiconductors;
  • Zinc oxide
Thumbnail image of graphical abstract

The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.