This work was supported by NSF/DMR 0308012, IMRA America Inc., and DOE/BES DE-AC36-99GO10337.
Amphoteric Phosphorus Doping for Stable p-Type ZnO†
Article first published online: 21 SEP 2007
Copyright © 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Special Issue: Special Section on Bionanotechnology
Volume 19, Issue 20, pages 3333–3337, October, 2007
How to Cite
Allenic, A., Guo, W., Chen, Y. B., Katz, M. B., Zhao, G. Y., Che, Y., Hu, Z. D., Liu, B., Zhang, S. B. and Pan, X. Q. (2007), Amphoteric Phosphorus Doping for Stable p-Type ZnO. Adv. Mater., 19: 3333–3337. doi: 10.1002/adma.200700083
- Issue published online: 17 OCT 2007
- Article first published online: 21 SEP 2007
- Manuscript Revised: 15 MAY 2007
- Manuscript Received: 10 JAN 2007
- NSF. Grant Number: DMR 0308012
- IMRA America Inc.
- DOE. Grant Number: BES DE-AC36-99GO10337
- Zinc oxide
The role of dislocations in stable p-type phosphorus-doped ZnO epitaxial films is investigated. It is shown that good p-type conductivity is always associated with a considerable increase in the density of dislocations, which can aid the formation of shallow complex acceptors and provide sinks for native donors.