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Advanced Materials

Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings

Authors


  • This work was carried out within the Nanometer Structure Consortium in Lund and was supported by grants from the Swedish Research Council (VR), the Swedish Foundation for Strategic Research (SSF), the Knut and Alice Wallenberg Foundation, the NoE SANDiE (EU contract No E500101-2), and the IP NODE (EU contract No 015783 NODE). We thank L. E. Wernersson, C. Rehnstedt, B. A. Wacaser, K. A. Dick, Z. Geretovszky, E. Wintersberger, and B. Mandl for valuable contributions. Supporting Information is available online from Wiley InterScience or from the authors.

Abstract

Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.

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